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| PF1010A MOS FET Power Amplifier Module for P/C LAN ADE-208-106A (Z) 2nd Edition July 1996 Features * * * * Frequency range: 806 to 824 MHz Surface mounted small package: 1 cc, 3g with shielded cover Loe voltage operation: 6 V Low power control current: 300 A Typ Pin Arrangement * RF-E 4 1: Pin 2: VAPC 3: VDD 4: Pout 5: GND 5 5 1 3 25 PF1010A Internal Diagram and External Circuit Pin1 Pin Pin2 VAPC Pin3 VDD Pin4 Pout Z1 C1 FB1 C3 C4 FB2 C2 Z2 Pin VAPC VDD Pout C1 = C2 = 0.01 F (Ceramic chip capacitor) C3 = C4 = 4.7 F (Tantalum) FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent Z1 = Z2 = 50 (Microstrip line) Absolute Maximum Ratings (Tc = 25C) Item Supply voltage Supply current APC voltage Input power Operating case temperature Storage temperature Symbol VDD I DD VAPC Pin Tc (op) Tstg Rating 12 2 3 20 -30 to +100 -30 to +100 Unit V A V mW C C 2 PF1010A Electrical Characteristics (Tc = 25C) Item Drain cutoff current Total efficiency Symbol I DS T Min -- 39 -- -- Max 100 -- -30 -30 3 -- -35 Unit A % dBc dBc -- W dBm -- f = 806, 824 MHz, Pin = 2 dBm, VDD = 4.8 V, VAPC = 4 V, Rg = RL = 50 f = 806, 824 MHz, Pin = 1 mW, VDD = 6 V, VAPC = 0.5 V, Rg = RL = 50 f = 806 to 824 MHz, Pin = 1 mW, VDD = 4.8 to 7.2 V, Pout 1.4 W, Rg = 50 , Load VSWR = 3:1 All phase angles Test Condition VDD = 12 V, VAPC = 0 V, Rg = RL = 50 f = 806, 824 MHz, Pin = 1 mW, VDD = 6 V, Rg = RL = 50 , Pout = 1.4 W (at APC controlled), 2nd harmonic distortion 2nd H.D. 3rd harmonic distortion Input VSWR Output power Isolation Stability 3rd H.D. VSWR (in) -- Pout -- -- 0.6 -- No parasitic oscillation 3 PF1010A Characteristic Curves VAPC, T, VSWR (in) vs. Frequency 5 3 Pin = 1 mW (0 dBm) VDD = 6 V Pout = 1.4 W Apc Voltage VAPC (V) 4 V.S.W.R. (in) 2.5 T 50 Efficiency T (%) Efficiency T (%) 55 3 2 VAPC 1.5 45 2 40 VSWRin 1 1 788 806 824 35 842 Frequency f (MHz) Pout, T, VSWR (in) vs. Frequency 5 1.5 Pin = 0.63 mW (--2 dBm) VDD = 4.8 V VAPC = 3 V Output Power Pout (V) 4 V.S.W.R. (in) 1.3 Pout 40 50 3 1.1 T 30 2 0.9 VSWRin 1 0.7 788 806 824 20 842 Frequency f (MHz) 4 PF1010A Pout, T vs. Pin (1) 1.3 f = 806 MHz VDD = 4.8 V VAPC = 3 V Pout Output Power Pout (W) Efficiency T (%) Efficiency T (%) 1.1 40 45 1.2 1.0 0.9 T 35 0.8 0.7 0 0.5 1.0 1.5 Input Power Pin (mW) Pout, T vs. Pin (2) 1.3 f = 824 MHz VDD = 4.8 V VAPC = 3 V 30 2.0 45 1.2 Output Power Pout (W) 1.1 Pout 1.0 40 0.9 35 0.8 T 0.7 0 0.5 1.0 1.5 Input Power Pin (mW) 30 2.0 5 PF1010A VAPC, T vs. Pin (1) 3 f = 806 MHz VDD = 6 V Pout = 1.4 W Apc Voltage VAPC (V) 2.5 Efficiency T (%) Efficiency T (%) T 2 VAPC 40 1.5 45 50 1 0 0.5 1.0 1.5 Input Power Pin (mW) VAPC, T vs. Pin (2) 3 f = 824 MHz VDD = 6 V Pout = 1.4 W Apc Voltage VAPC (V) 2.5 T 2 VAPC 35 2.0 50 45 40 1.5 1 0 0.5 1.0 1.5 Input Power Pin (mW) 35 2.0 6 PF1010A Pout, T vs. VDD (1) 3.3 f = 806 MHz Pin = 1 mW VAPC = 3 V 45 2.8 Output Power Pout (W) 2.3 T 1.8 35 Pout 1.3 0.8 4 5 6 7 Supply Voltage VDD (V) Pout, T vs. VDD (2) 3.3 f = 824 MHz Pin = 1 mW VAPC = 3 V 8 30 45 2.8 Output Power Pout (W) 2.3 T 35 1.3 1.8 Pout 0.8 4 5 6 7 Supply Voltage VDD (V) 8 30 Efficiency T (%) 40 Efficiency T (%) 40 7 PF1010A Pout, T vs. VAPC (1) 2.5 f = 806 MHz Pin = 1 mW VDD = 6 V Output Power Pout (W) 2 60 T 50 Efficiency T (%) Efficiency T (%) 40 Pout 1.5 30 1 20 0.5 0 1 2 Apc Voltage VAPC (V) Pout, T vs. VAPC (2) 2.5 f = 824 MHz Pin = 1 mW VDD = 6 V Output Power Pout (W) 2 3 10 60 T 50 40 1.5 Pout 30 1 20 0.5 0 1 2 Apc Voltage VAPC (V) 3 10 8 PF1010A Pout, T vs. VAPC (3) 1.2 1.1 Output Power Pout (W) 1.0 0.9 0.8 0.7 0.6 0.5 0 1 2 Apc Voltage VAPC (V) Pout, T vs. VAPC (4) 1.2 1.1 Output Power Pout (W) 1.0 0.9 30 0.8 0.7 0.6 0.5 0 1 2 Apc Voltage VAPC (V) 3 10 Pout 20 f = 824 MHz Pin = 0.63 mW VDD = 4.8 V 50 3 10 Pout 30 f = 806 MHz Pin = 0.63 mW VDD = 4.8 V T 50 40 Efficiency T (%) Efficiency T (%) 20 T 40 9 PF1010A VSWR (in) vs. Pin (1) 5 f = 806 MHz VDD = 6 V 4 V.S.W.R. (in) 3 Pout=1.4W 2 VAPC=3 V 1 0 0.5 1.0 1.5 Input Power Pin (mW) VSWR (in) vs. Pin (2) 5 f = 824 MHz VDD = 6 V 4 V.S.W.R. (in) 2.0 3 Pout=1.4W 2 VAPC=3 V 1 0 0.5 1.0 1.5 Input Power Pin (mW) 2.0 10 PF1010A 2nd H.D, 3rd H.D vs. Pin (1) -30 f = 806 MHz VDD = 6 V Pout = 1.4 W -30 -40 2nd H.D (dBc) -40 3rd H.D (dBc) 3rd H.D (dBc) -50 2nd H.D -50 -60 3rd H.D -70 0 0.5 1.0 1.5 2.0 Input Power Pin (mW) 2nd H.D, 3rd H.D vs. Pin (2) -30 f = 824 MHz VDD = 6 V Pout = 1.4 W -60 -70 2.5 -30 -40 2nd H.D (dBc) -40 -50 2nd H.D -60 3rd H.D -70 0 0.5 1.0 1.5 2.0 Input Power Pin (mW) -50 -60 -70 2.5 11 PF1010A Package Dimensions Unit: mm 25 0.5 1.5 22 0.5 1.5 5 - 3.0 1 2 3 0.3 4 2.35 0.5 0.25 3.7 0.5 0.3 1.5 1.8 5.1 7.6 5.1 2.4 0.5 12 0.5 Hitachi Code JEDEC EIAJ Weight (reference value) 5.8 8.8 RF-E -- -- 3g 12 PF1010A When using this document, keep the following in mind: 1. This document may, wholly or partially, be subject to change without notice. 2. All rights are reserved: No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without Hitachi's permission. 3. Hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the user's unit according to this document. 4. Circuitry and other examples described herein are meant merely to indicate the characteristics and performance of Hitachi's semiconductor products. Hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. No license is granted by implication or otherwise under any patents or other rights of any third party or Hitachi, Ltd. 6. MEDICAL APPLICATIONS: Hitachi's products are not authorized for use in MEDICAL APPLICATIONS without the written consent of the appropriate officer of Hitachi's sales company. Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi's products are requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL APPLICATIONS. Hitachi, Ltd. Semiconductor & IC Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 For further information write to: Hitachi America, Ltd. Semiconductor & IC Div. 2000 Sierra Point Parkway Brisbane, CA. 94005-1835 USA Tel: 415-589-8300 Fax: 415-583-4207 Hitachi Europe GmbH Electronic Components Group Continental Europe Dornacher Strae 3 D-85622 Feldkirchen M nchen Tel: 089-9 91 80-0 Fax: 089-9 29 30 00 Hitachi Europe Ltd. Electronic Components Div. Northern Europe Headquarters Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA United Kingdom Tel: 0628-585000 Fax: 0628-778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 0104 Tel: 535-2100 Fax: 535-1533 Hitachi Asia (Hong Kong) Ltd. Unit 706, North Tower, World Finance Centre, Harbour City, Canton Road Tsim Sha Tsui, Kowloon Hong Kong Tel: 27359218 Fax: 27306071 Copyright ' Hitachi, Ltd., 1997. All rights reserved. Printed in Japan. 13 |
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